发明名称 |
Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features and Equal Number of PMOS and NMOS Transistors with Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region |
摘要 |
A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including a p-type and an n-type diffusion region separated by a central inactive region. The layout of the cell includes a gate electrode level layout corresponding to an entire gate level of the cell. The gate electrode layout includes a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the cell.
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申请公布号 |
US2010017770(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
US20090567641 |
申请日期 |
2009.09.25 |
申请人 |
TELA INNOVATIONS, INC. |
发明人 |
BECKER SCOTT T.;SMAYLING MICHAEL C. |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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地址 |
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