发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device, comprising: forming n-channel field-effect transistors on a silicon substrate; forming a first insulating film covering the field-effect transistors; shrinking the first insulating film; forming a second insulating film over the first insulating film; and shrinking the second insulating film, wherein the forming an insulating film covering the field-effect transistors and the shrinking the insulating film are repeated a plurality of time.
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申请公布号 |
US2010012991(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
US20090567972 |
申请日期 |
2009.09.28 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
OWADA TAMOTSU;WATATANI HIROFUMI |
分类号 |
H01L29/78;H01L21/31 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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