发明名称 |
PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY |
摘要 |
A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.
|
申请公布号 |
US2010013972(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
US20080174264 |
申请日期 |
2008.07.16 |
申请人 |
ADKISSON JAMES W;ELLIS-MONAGHAN JOHN J;KRISHNASAMY RAJENDRAN;MULUGETA SOLOMON;MUSANTE CHARLES F;RASSEL RICHARD J |
发明人 |
ADKISSON JAMES W.;ELLIS-MONAGHAN JOHN J.;KRISHNASAMY RAJENDRAN;MULUGETA SOLOMON;MUSANTE CHARLES F.;RASSEL RICHARD J. |
分类号 |
H04N5/353;H04N5/355;H04N5/3745 |
主分类号 |
H04N5/353 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|