发明名称 DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 <P>PROBLEM TO BE SOLVED: To easily remove ruthenium films adhering on a substrate rear, a substrate bevel and an outer periphery by etching without a remainder. Ž<P>SOLUTION: Film-formation treatment such as ruthenium is conducted to the surface of a substrate 5, the substrate 5 is rotated while being held by rollers 4, the substrate 5 is held by U-shaped jigs 3 and an etchant is supplied from the upper section of the U-shaped jigs 3. Consequently, the ruthenium films adhering on the substrate rear, the substrate bevel and the outer periphery can easily be removed without the remainder. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010016138(A) 申请公布日期 2010.01.21
申请号 JP20080174037 申请日期 2008.07.03
申请人 PANASONIC CORP 发明人 ABE MITSUHIDE
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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