发明名称 |
Semiconductor device with multiple gate dielectric layers and method for fabricating the same |
摘要 |
Disclosed are a semiconductor device with dual gate dielectric layers and a method for fabricating the same. The semiconductor device includes: a silicon substrate divided into a cell region where NMOS transistors are formed and a peripheral region where NMOS and PMOS transistors are formed; a targeted silicon oxide layer formed on the silicon substrate in the cell region; an oxynitride layer formed on the silicon substrate in the peripheral region; a first gate structure formed in the cell region; a second gate structure formed on the oxynitride layer in an NMOS region of the peripheral region; and a third gate structure formed on the oxynitride layer in a PMOS region of the peripheral region. |
申请公布号 |
US2010013022(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
US20090457540 |
申请日期 |
2009.06.15 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HEUNG-JAE CHO;KWAN-YONG LIM;SEUNG-RYONG LEE |
分类号 |
H01L27/105;H01L29/792 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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