| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing having high polishing speed and high polishing selectivity to a copper film, and having a small amount of metal contamination in a wafer, and to provide a chemical mechanical polishing method using the aqueous dispersing element for chemical mechanical polishing. <P>SOLUTION: The aqueous dispersing element for chemical mechanical polishing polishes the copper film. The copper film contains: a silica particle A; an organic acid B; and a water-soluble polymer C having properties as a Lewis base of which weight-average molecular weight is not less than ten thousand and not more than a million and a half. The silica particle A has chemical properties, where the contents of sodium, potassium, and an ammonium ion measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ions by ion chromatography meet a relationship, where sodium content is 5-500 ppm and the content of at least one kind selected from the potassium and ammonium ion is 100-20,000 ppm. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
