| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing a group-III nitride-based light-emitting element, in which generation of droplets is reduced while growing an InGaN semiconductor. <P>SOLUTION: An active layer 21 is formed that generates light having a peak wavelength in a wavelength range of 490 nm or more and 550 nm or less. Growth of a barrier layer 23a is performed at the growth temperature T<SB>B</SB>of 880°C during a time from t1 to t2. During a time from t2 to t3, the substrate temperature in a growth furnace 10 descends from the temperature T<SB>B</SB>to a temperature T<SB>W</SB>. During a time from t3 to t4, the growth furnace 10 is supplied with a raw material gas G<SB>W</SB>to grow an undoped In<SB>0.2</SB>Ga<SB>0.8</SB>N well layer 25a on the barrier layer 23a at temperature T<SB>W</SB>. The growth temperature T<SB>W</SB>is 800°C. The raw material gas G<SB>W</SB>includes NH<SB>3</SB>and monomethylamine together with a group-III raw material. A flow ratio of the rate of monomethylamine and that of ammonia, i.e., "monomethylamine"/"ammonia", is 1/10,000 or less. <P>COPYRIGHT: (C)2010,JPO&INPIT |
