发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and a manufacturing method of the device. <P>SOLUTION: The semiconductor device 10 is provided with a semiconductor chip 11 having an electrode 11a and at least one electrode 11b which is not connected to an external electrode on a main face, a protection film 12 which is formed on a main face of the semiconductor chip 11 and has an opening 12b at an upper part of the electrode 11b, an insulating film 13 formed at an upper part of the protection film 12 and a wiring part (wiring 14 in Fig.1) which is formed outside a region of the opening 12b on the main face of the insulating film 13 and is electrically connected to the electrode 11a. Since the wiring part is not formed at an upper part of the opening 12b, high reliability can be obtained. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010016202(A) |
申请公布日期 |
2010.01.21 |
申请号 |
JP20080175154 |
申请日期 |
2008.07.04 |
申请人 |
FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD |
发明人 |
IWAMIZU MORIO;KIUCHI SHIN;OE TAKASATO;YOSHIDA YASUKI;IWATA HIDEKI;CHO ENSO |
分类号 |
H01L21/3205;H01L21/66;H01L23/52 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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