| 摘要 |
Disclosed are a contact plug of a semiconductor device and a method for fabricating the same. The semiconductor device includes: an epitaxial stack formed by inserting a heteroepitaxy layer between a pair of homoepitaxy layers; and a contact plug including a metal layer on the epitaxial stack. Accordingly, in accordance with the present invention, the contact plug is selectively doped in a high concentration, thereby reducing a contact resistance. Furthermore, the present invention also provides an effect of reducing degradation in a device property without decreasing yields of products by minimizing a thermal budget through using a SEG-silicon germanium layer capable of obtaining a high doping concentration and a high deposition speed.
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