发明名称 |
BURN-IN SENSOR FOR IMPLANTATION ONTO A MICROELECTRONIC INTEGRATED CIRCUIT AND INTEGRATED CIRCUIT THUS OBTAINED |
摘要 |
The burn-in sensor consists of a bias level A, having constant bias voltage; a level B, having at least two sources of current, of which one has rapid drift; and a current mirror circuit C, having monitored burn-in and a stack or differentiation outlet. This invention can be used in the microelectronics industry. |
申请公布号 |
WO2009144420(A3) |
申请公布日期 |
2010.01.21 |
申请号 |
WO2009FR00633 |
申请日期 |
2009.05.28 |
申请人 |
UNIVERSITE DE STRASBOURG;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, CNRS;KAMMERER, JEAN-BAPTISTE;DUBOIS, BENOIT |
发明人 |
KAMMERER, JEAN-BAPTISTE;DUBOIS, BENOIT |
分类号 |
G01R31/30;G01R31/26;G01R31/28 |
主分类号 |
G01R31/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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