发明名称 BURN-IN SENSOR FOR IMPLANTATION ONTO A MICROELECTRONIC INTEGRATED CIRCUIT AND INTEGRATED CIRCUIT THUS OBTAINED
摘要 The burn-in sensor consists of a bias level A, having constant bias voltage; a level B, having at least two sources of current, of which one has rapid drift; and a current mirror circuit C, having monitored burn-in and a stack or differentiation outlet. This invention can be used in the microelectronics industry.
申请公布号 WO2009144420(A3) 申请公布日期 2010.01.21
申请号 WO2009FR00633 申请日期 2009.05.28
申请人 UNIVERSITE DE STRASBOURG;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, CNRS;KAMMERER, JEAN-BAPTISTE;DUBOIS, BENOIT 发明人 KAMMERER, JEAN-BAPTISTE;DUBOIS, BENOIT
分类号 G01R31/30;G01R31/26;G01R31/28 主分类号 G01R31/30
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