摘要 |
A method of growing planar non-polar m-plane or semi-polar III- Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the Ill-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III- Nitride epitaxial layer on the intermediate layer using HVPE. |
申请人 |
OSTENDO TECHNOLOGIES, INC.;USIKOV, ALEXANDER;SYRKIN, ALEXANDER;BROWN, ROBERT, G.W.;EL-GHOROURY, HUSSEIN, S.;SPIBERG, PHILIPPE;IVANTSOV, VLADIMIR;KOVALENKOV, OLEG;SHAPOVALOVA, LISA |
发明人 |
USIKOV, ALEXANDER;SYRKIN, ALEXANDER;BROWN, ROBERT, G.W.;EL-GHOROURY, HUSSEIN, S.;SPIBERG, PHILIPPE;IVANTSOV, VLADIMIR;KOVALENKOV, OLEG;SHAPOVALOVA, LISA |