发明名称 CALIBRATION CIRCUIT, ON DIE TERMINATION DEVICE, AND SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A calibration circuit, on die termination device, and semiconductor memory device is provided to adjust the termination resistor value by reflecting the calibration result to the termination resistor circuit. CONSTITUTION: The gain control circuit comprises the comparison amplifier circuit(701) and output controlling circuit(703). The comparison amplifier circuit generates the control signal which controls the level of the voltage of the output signal by comparing the voltage (VIN) of the input signal and voltage (VOUT) of the output signal. The output controlling circuit controls the level of the voltage of the output signal in response to the control signal of the comparison amplifier circuit. The comparison amplifier circuit comprises the PMOS transistor (P1) and the first route consisting of the input N-channel metal oxide semiconductor transistor arrangement. The output controlling circuit is composed of the PMOS transistor (P5) connected to the power supply voltage (VCC). The bias circuit(705) controls the on/OFF of the comparison amplifier circuit and output controlling circuit and bias with the bias signal.
申请公布号 KR100937951(B1) 申请公布日期 2010.01.21
申请号 KR20080087520 申请日期 2008.09.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, MI HYE;SHIM, SEOK BO
分类号 G11C7/10;G11C5/14 主分类号 G11C7/10
代理机构 代理人
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