发明名称 MASK PATTERN DATA PREPARATION METHOD, MASK PATTERN DATA PREPARATION PROGRAM, MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask pattern data preparation method can form a highly precise pattern. <P>SOLUTION: This pattern data preparation method includes a procedure for determining whether auxiliary pattern data arranged respectively with respect to adjacent main pattern data approximate at a prescribed interval or less or overlap each other, or not, based on an initial positional data expressing an initial set position of the auxiliary pattern data determined based on an illumination condition, and based on an initial size data expressing an initial set size of the auxiliary pattern data satisfying a size condition not image-focused on a body to be transferred, and a procedure for moving the size of at least one of the approximating auxiliary pattern data or for reducing the size of at least one of the approximating auxiliary pattern data, to widen the interval of the approximating auxiliary pattern data more than the prescribed interval, when the approximating auxiliary pattern data are determined to approximate at the prescribed interval or less or overlap each other. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010015140(A) 申请公布日期 2010.01.21
申请号 JP20090126283 申请日期 2009.05.26
申请人 TOSHIBA CORP 发明人 KODAMA CHIKAAKI;ICHIKAWA HIROTAKA;KOTANI TOSHIYA;MASUKAWA KAZUYUKI
分类号 G03F1/36;G03F1/68;G03F1/70 主分类号 G03F1/36
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