发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of maintaining a consuming current amount to be always minimum independently of the operation mode by multiplexing a route to which a clock swinging at a CML level is transmitted, in the semiconductor memory device. <P>SOLUTION: The semiconductor memory device includes: a first clock transmission path for outputting a CML source clock by converting it so as to swing at a CMOS level after the CML source clock is transmitted through a clock transmission line in response to an enable signal; a second clock transmission path for outputting the source clock by being transmitted through the clock transmission line after converting the source clock so as to swing at the CMOS level in response to the enable signal; and a data output means for outputting the data in response to output clocks of the first and second clock transmission paths. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010015668(A) 申请公布日期 2010.01.21
申请号 JP20090146169 申请日期 2009.06.19
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIM KYUNG-HOON;YOON SANG-SIK;KIM BO-KYEOM
分类号 G11C11/417;H03K5/15;H03K19/0175;H03K19/0185;H03K19/0948 主分类号 G11C11/417
代理机构 代理人
主权项
地址