METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for improving the uniformity of a formed film thickness and reproducibility by suppressing a variation in the uniformity of the formed film thickness caused by the deformation of a susceptor when a treatment chamber of a substrate treatment apparatus is subjected to dry cleaning. Ž<P>SOLUTION: The substrate treatment apparatus includes: a treatment chamber 46; a susceptor 56; a film forming gas supply line 58; fluorine-based gas supply lines 102, 103 for supplying fluorine-based gases; an activation mechanism 101 for activating the fluorine-based gas by plasma; an activated gas supply line 58 for supplying the fluorine-based gas activated by the plasma by the activation mechanism to the inside of the treatment chamber; and a control section 41 for controlling so that the treatment of forming a film by supplying the film forming gas to the substrate is repeated at least one or more times, the treatment of carrying a dummy substrate into the treatment chamber and placing the carried substrate on the susceptor and supplying the fluorine-base gas activated by the plasma into the treatment chamber is repeated a plurality of times, and the treatment of carrying the substrate into the treatment chamber again and forming a film is executed at least at one or more times. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž