| 摘要 |
<P>PROBLEM TO BE SOLVED: To more strongly prevent the entry of hydrogen than with a method for arranging metals on a group of resistors, in order to suppress that a change in resistance value during the entry of hydrogen into a resistor, to shorten overlapping of metallic sections and to miniaturize ICs. Ž<P>SOLUTION: A silicon nitride protective film is deposited in a manner to cover a polycrystal silicon formed of a heavily-doped impurity area and a lightly-doped impurity area, and an interlayer dielectric is then deposited on the silicon nitride protective film. The interlayer dielectric and the silicon nitride protective film are etched to make a contact hole, which is used to connect a plurality of resistors made of polycrystal silicon by metal wiring. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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