| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of fully suppressing drop of the withstand voltage between a drain and a source, while suppressing increase in the size. SOLUTION: This semiconductor device 1 includes a p-type body region 4, an n-type source region 10 formed in the body region 4, and an n-type lightly-doped drain region 3, and at the circumferences of both ends 10a of the source region 10, the lightly-doped drain region 3 and the body region 4 are formed away from each other; and in the circumferences of both ends 10a of the source region 10, n-type diffusion regions 5 are formed between the lightly-doped drain region 3 and the body region 4. COPYRIGHT: (C)2010,JPO&INPIT
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