发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 A first multilayer body is formed by alternately layering dielectric films and electrode films on a substrate. Then, an end portion of the first multilayer body is processed into a staircase shape, and a first interlayer dielectric film is formed around the first multilayer body. Next, a plurality of contact holes having a diameter decreasing downward are formed in the first interlayer dielectric film so that the contact holes reach respective end portions of the electrode films. Then, a sacrificial material is buried in the contact holes. Next, a second multilayer body is formed immediately above the first multilayer body, and a second interlayer dielectric film is formed around the second multilayer body. Thereafter, a plurality of contact holes having a diameter decreasing downward are formed in the second interlayer dielectric film to communicate with the respective contact holes formed in the first interlayer dielectric film. Then, the sacrificial material is removed and a contact is buried inside the contact holes. The contact has a step difference.
申请公布号 US2010013049(A1) 申请公布日期 2010.01.21
申请号 US20090504959 申请日期 2009.07.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANAKA HIROYASU;ISHIDUKI MEGUMI;KOMORI YOSUKE;FUKUZUMI YOSHIAKI;KITO MASARU;AOCHI HIDEAKI;KATSUMATA RYOTA;KIDOH MASARU;MATSUOKA YASUYUKI
分类号 H01L23/522;H01L21/02;H01L21/768 主分类号 H01L23/522
代理机构 代理人
主权项
地址