| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of reducing dispersion of FFP and a threshold current caused by dispersion of a ridge shape. Ž<P>SOLUTION: In a p-type clad layer 16, a first p-type clad layer 16A comprising a single layer, and a second p-type clad layer 16B comprising a superlattice structure are formed. The second p-type clad layer 16B is arranged on a contact layer 17 side in a relationship with the first p-type clad layer 16A, and mainly formed of the same material as a material mainly included in the first p-type clad layer 16A. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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