| 摘要 |
Provided is a method in which a photodiode layer is formed on a metal interconnection layer, and a hard mask layer is formed on the photodiode layer. Then, a photoresist pattern is formed on the hard mask layer to define a contact hole region, and a first hole is formed in the hard mask layer through an etching process. Next, an ion implantation etching layer is formed in the photodiode layer using the photoresist pattern as an ion implantation mask, and a second hole is formed by etching the ion implantation etching layer. A third hole is formed to expose the metal interconnection by etching a region of the metal interconnection layer corresponding to the second hole.
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