| 摘要 |
A semiconductor device (10) of the present invention includes: a drift layer (5) that includes a reference concentration layer (4) including an impurity of a first conductive type at a first reference concentration and a low concentration layer (3) provided under the reference concentration layer and including an impurity of the first conductive type at a concentration lower than the first reference concentration; a gate electrode (20) that is formed on an upper surface of the reference concentration layer; a pair of source regions (8a and 8b) that are respectively provided on the reference concentration layer in the vicinity of ends of the gate electrode and include an impurity of the first conductive type at a concentration higher than the first reference concentration; a pair of base regions (7a and 7b) that respectively surround outer surfaces of diffusion layers of the source regions and include an impurity of the second conductive type at a second reference concentration; a source electrode (14) that is electrically connected to the source regions and the base regions; a pair of depletion-layer extension regions (6a and 6b) that are respectively provided in the reference concentration layer under diffusion layers of the base regions and include an impurity of the second conductive type at a concentration lower than the second reference concentration; a drain layer (2) that is provided on a lower surface of the low concentration layer and includes an impurity of the first conductive type at a concentration higher than the first reference concentration; and a drain electrode (1) that is provided on a lower surface of the drain layer, a voltage being applied between the source electrode and the drain electrode. The lower surfaces of the depletion-layer extension regions are deeper than a boundary between the low concentration layer and the reference concentration layer, and intrude into the low concentration layer.
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