| 摘要 |
PURPOSE: A plasma process device is provided to compensate for the lowering of the plasma density in the center of a process chamber by installing at least one antenna in an upper side and a lateral side of the process chamber. CONSTITUTION: A plasma process device includes a reactive chamber(100) and an antenna(110) installed in an upper side and a lateral side of a reactive chamber. The plasma process device includes a shower head(130) and a bottom electrode(150) to face each other in the reactive chamber. The reactive chamber maintains the substrate processing area airtightly and includes a reactive unit(100a) and a cover(100b). The antenna includes first to third antennas(110a,110b,110c) with different diameters. The first and second antennas are installed in the upper side of the reactive chamber. The third antenna surrounds the reactive chamber. |
