| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a ferroelectric capacitor which has excellent electric characteristics and high reliability, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device includes an interlayer insulating film 40 provided above a semiconductor substrate 10, a conductive plug 46 buried in the interlayer insulating film 40, a first underlying conductive film 52 which is provided on the conductive plug 46 and on the interlayer insulating film 40 and which has a flat upper surface, and the ferroelectric capacitor 72 provided on the first underlying conductive film 52. At least in a region on the conductive plug 46, the concentration of nitrogen in the first underlying conductive film 52 gradually decreases from the upper surface to the inside. COPYRIGHT: (C)2010,JPO&INPIT |
