GROUP III NITRIDE CRYSTAL JOINED SUBSTRATE, ITS PRODUCING METHOD, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

摘要

<P>PROBLEM TO BE SOLVED: To provide a group III nitride crystal joined substrate having an arbitrarily specified main plane of ähk-(h+k)l} (wherein h, k and l are integers) except ä0001} and a group III nitride crystal. Ž<P>SOLUTION: The group III nitride crystal joined substrate is a group III nitride crystal joined substrate 10 having an arbitrarily specified main plane 10m of ähk-(h+k)l} except ä0001}, which contains a plurality of group III nitride crystal chips 11p, 11q having a main plane 11m of ähk-(h+k)0} (wherein h and k are integers) and group III nitride crystal chips 11p, 11q are mutually joined by at least a part of each main plane 11m so as to make the [0001] directions of group III nitride crystal chips 11p, 11q identical. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž