SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM

摘要

Substrate, in particular in silicon carbide, covered by a thin film of stoichiometric silicon nitride, for the manufacture of electronic components and method for obtaining said film. To obtain the film on the substrate (1) in the presence of at least one nitrogen gas, the substrate is covered with a film (2) of a material that is permeable to said gas and the film of silicon nitride is capable of forming at the interface between the substrate and the film of the material. The invention applies for example to microelectronics.