发明名称 |
POWER INTRODUCTION TERMINAL FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE |
摘要 |
<p>Disclosed is a power introduction terminal for a plasma processing device wherein power can be introduced efficiently from a rodlike conductor into a chamber by minimizing discharge between the chamber wall (through hole) and an insulator (vally on the proximal end side). The power introduction terminal (10) of a plasma processing device comprises a rodlike conductor (11) for introducing power into a chamber (31) of a plasma processing device (30), and an insulator (13) projecting into the chamber (31) from a through hole (33) that penetrates a chamber wall (32) constituting the chamber (31) in order to hold the rodlike conductor (11). The insulator (13) is provided with a plurality of mountains (13m) and a plurality of valleys (13v) arranged from the distal end (TS) side to the proximal end (BS) side of the rodlike conductor (11) to cover the rodlike conductor (11), and the valleys (13vb) arranged in association with the through hole (33) on the proximal end (BS) side are constituted to limit generation of discharge (e.g. equipped with an insulating resin portion (15)) as compared with the valleys (13vt) arranged in the chamber (31) on the distal end (TS) side.</p> |
申请公布号 |
WO2010008076(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
WO2009JP62990 |
申请日期 |
2009.07.17 |
申请人 |
SHARP KABUSHIKI KAISHA;KISHIMOTO, KATSUSHI;NISHI, YUTAKA |
发明人 |
KISHIMOTO, KATSUSHI;NISHI, YUTAKA |
分类号 |
H01L21/205;H05H1/46 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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