发明名称 POWER INTRODUCTION TERMINAL FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE
摘要 <p>Disclosed is a power introduction terminal for a plasma processing device wherein power can be introduced efficiently from a rodlike conductor into a chamber by minimizing discharge between the chamber wall (through hole) and an insulator (vally on the proximal end side). The power introduction terminal (10) of a plasma processing device comprises a rodlike conductor (11) for introducing power into a chamber (31) of a plasma processing device (30), and an insulator (13) projecting into the chamber (31) from a through hole (33) that penetrates a chamber wall (32) constituting the chamber (31) in order to hold the rodlike conductor (11).  The insulator (13) is provided with a plurality of mountains (13m) and a plurality of valleys (13v) arranged from the distal end (TS) side to the proximal end (BS) side of the rodlike conductor (11) to cover the rodlike conductor (11), and the valleys (13vb) arranged in association with the through hole (33) on the proximal end (BS) side are constituted to limit generation of discharge (e.g. equipped with an insulating resin portion (15)) as compared with the valleys (13vt) arranged in the chamber (31) on the distal end (TS) side.</p>
申请公布号 WO2010008076(A1) 申请公布日期 2010.01.21
申请号 WO2009JP62990 申请日期 2009.07.17
申请人 SHARP KABUSHIKI KAISHA;KISHIMOTO, KATSUSHI;NISHI, YUTAKA 发明人 KISHIMOTO, KATSUSHI;NISHI, YUTAKA
分类号 H01L21/205;H05H1/46 主分类号 H01L21/205
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