| 摘要 |
PURPOSE: A method for programming a nonvolatile memory device is provided to maintain the distribution of a threshold voltage regularly by performing a program operation by reflecting a variation characteristic of a program speed by the increase of the number of program erase operations. CONSTITUTION: Whether all memory cells are programmed over a verification voltage is verified(540). If all memory cells are programmed over the verification voltage, a program operation is completed(550). If the program is not completed, whether at least one memory cell is programmed over the verification voltage is confirmed(570).
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