| 摘要 |
PROBLEM TO BE SOLVED: To suppress junction leakage of an asymmetric transistor. SOLUTION: This semiconductor device 100 includes an MOSFET 110 having: a gate electrode 115 formed above a silicon substrate 101; and a first impurity diffusion region 103 and a second impurity diffusion region 105, formed in the silicon substrate 101 in different sides of the gate electrode 115. The MOSFET 110 has an extension region 107 in an upper section of the first impurity diffusion region 103 and an extension region 107 in the upper section of the second impurity diffusion region 105, does not have a first silicide layer 109 on the first impurity diffusion region 103, and does not have a silicide layer on the second impurity diffusion region 105, in the vicinity of a side end of the gate electrode 115. COPYRIGHT: (C)2010,JPO&INPIT |
