发明名称 THIN FILM FIELD EFFECT TRANSISTOR, FABRICATION PROCESS THEREFOR, AND DISPLAY DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a TFT having a high field effect mobility, a high ON/OFF ratio and improved environmental temperature dependency; and to provide a fabrication process therefor and a display device using the same. SOLUTION: A TFT has, at least, a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode on a substrate, wherein a resistance portion having an electric resistivity higher than the resistance of the active layer is provided between the active layer and at least the source electrode or the drain electrode, and the resistance portion and the gate electrode are arranged at such positions as not having a planar overlapping portion. A fabrication process of TFT and a display device are also disclosed. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010016126(A) 申请公布日期 2010.01.21
申请号 JP20080173862 申请日期 2008.07.02
申请人 FUJIFILM CORP 发明人 TAKAHASHI TOSHIAKI;NAKAYAMA MASAYA
分类号 H01L29/786;H01L21/336;H01L51/50;H05B33/02;H05B33/08 主分类号 H01L29/786
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