发明名称 METHOD FOR CONTROLLING TEMPERATURE OF MATERIAL IN CHAMBER OF PLASMA TREATMENT DEVICE, MOUNTING STAGE FOR MATERIAL IN CHAMBER AND SUBSTRATE, AND PLASMA TREATMENT DEVICE EQUIPPED WITH THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method capable of controlling temperatures of a variety of materials used for plasma treatment to be the most suitable temperatures from an initial stage of the plasma treatment. SOLUTION: A method for controlling the temperature controls the temperatures of materials in a chamber used in a plasma treatment device that performs plasma treatment to a subject substrate. A plurality of power supplies are provided with materials in the chamber. While supplying electric power through the power supplies to heat the materials, a resistance value or the resistivity of the materials in the chamber is measured. The electric power is controlled based on the temperatures of the materials in the chamber presumed by the resistance value or the resistivity. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010016319(A) 申请公布日期 2010.01.21
申请号 JP20080177412 申请日期 2008.07.07
申请人 TOKYO ELECTRON LTD 发明人 KOSHIMIZU CHISHIO;IWATA MANABU;MATSUDO TATSUO
分类号 H01L21/3065 主分类号 H01L21/3065
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