| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure a high magnetoresistance ratio and to reduce a write current. Ž<P>SOLUTION: A magnetoresistive element 10 includes a fixed layer 15 having magnetic anisotropy perpendicular to a film surface and a fixed magnetization, a recording layer 17 having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer 16 provided between the fixed layer 15 and the recording layer 17, and containing a nonmagnetic material. A magnetic layer 17A-1 being in contact with the intermediate layer 16 among the magnetic layers constituting the recording layer 17 contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of a magnetic layer being not in contact with the intermediate layer 16. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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