METAL LINE PATTERN USING A TUNGSTEN REGROWING AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A method for forming a metal wiring pattern by regrowing tungsten is provided to form a device with high integrity by forming a metal wiring structure on a tungsten plug through the regrowth of the tungsten without a photolithography process. CONSTITUTION: A first interlayer insulating film(110) is formed on a semiconductor substrate(100). The first interlayer insulation film is planarized. A contact hole is formed for making a metal wiring layer. A tungsten plug layer(130) is deposited on an upper side of a barrier metal(120). The tungsten plug layer is planarized. The tungsten plug layer is regrown by a plasma oxidation or RTA(Rapid Thermal Annealing) process. A second interlayer insulation film(150) is formed on the first interlayer insulation film and the regrown tungsten layer(140). The second interlayer insulation film is planarized. The regrown tungsten layer is grown based on the tungsten plug layer.