| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of loss of light to be transmitted, and to improve the efficiency of a manufacturing process. SOLUTION: An anisotropic etching is performed to a single-crystal silicon film using a hard mask HM to form a single-crystal silicon pattern. A thermal oxidization process is performed on the single-crystal silicon pattern to transform the exposed side wall part of the single crystal silicon pattern into silicon oxide, thus a second clad layer 201 is formed and a core layer 111 is formed in the single-crystal silicon pattern. Here, an isotropic thermal oxidization process is performed. COPYRIGHT: (C)2010,JPO&INPIT |
