| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which can keep the reduction of forward voltage and backward leak current and is high in productivity, and to provide a manufacturing method thereof. SOLUTION: In the Schottky barrier diode 100, a selective growth mask film 2 is formed on a substrate 1, and a simple and selective growth method is used to form GaN layers 3 and 4 wherein a tapered projecting shape is formed on their surfaces, so that a Schottky barrier diode high in productivity can be manufactured. In addition, a Schottky electrode 5 made of a metallic material is formed on the upper surfaces of the GaN layers 3 and 4 having a triangular shape, so that a depleted layer 7 can be appropriately formed on the surface of the GaN layer 3. As a result, the Schottky barrier diode wherein forward voltage and backward leakage current are reduced can be realized. COPYRIGHT: (C)2010,JPO&INPIT |
