| 摘要 |
A substrate processing system includes a processing chamber that can house a substrate therein; a target comprises a sputtering surface in the processing chamber, wherein the substrate is configured to receive material sputtered off the sputtering surface; a magnetron positioned adjacent to the target, wherein the magnetron can produce two erosion grooves separated by a distance S on the sputtering surface, wherein at least one of the two erosion grooves is characterized by an erosion width W; and a first transport mechanism that can move the magnetron in N steps along a travel path in a first direction. N is an integer. The magnetron can stop at each of the N steps to allow materials to be sputtered off the sputtering surface and to be deposited on the substrate. The N steps have substantially the same step size. The step size is approximately equal to the erosion width W.
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