发明名称 Contact Structures in Substrate Having Bonded Interface, Semiconductor Device Including the Same, Methods of Fabricating the Same
摘要 On embodiment of a contact structure may include a lower insulation layer on a lower substrate, an upper substrate on the lower insulation layer, a groove penetrating the upper substrate to extend into the lower insulation layer, the groove below an interface between the upper substrate and the lower insulation layer, an upper insulation layer in the groove, and a contact plug penetrating the upper insulation layer in the groove to extend into the lower insulation layer.
申请公布号 US2010012980(A1) 申请公布日期 2010.01.21
申请号 US20090504989 申请日期 2009.07.17
申请人 SONG MIN-SUNG;JUNG SOON-MOON;KIM HAN-SOO;RAH YOUNG-SEOP;CHO WON-SEOK;SON YANG-SOO;KIM JONG-HYUK;JANG YOUNG-CHUL 发明人 SONG MIN-SUNG;JUNG SOON-MOON;KIM HAN-SOO;RAH YOUNG-SEOP;CHO WON-SEOK;SON YANG-SOO;KIM JONG-HYUK;JANG YOUNG-CHUL
分类号 H01L29/68;H01L21/768;H01L23/52 主分类号 H01L29/68
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