发明名称 |
METHOD AND CHAMBER FOR INDUCTIVELY COUPLED PLASMA PROCESSING FOR CYLINDERICAL MATERIAL WITH THREE-DIMENSIONAL SURFACE |
摘要 |
The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like. |
申请公布号 |
WO2010008116(A2) |
申请公布日期 |
2010.01.21 |
申请号 |
WO2008KR05734 |
申请日期 |
2008.09.29 |
申请人 |
KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE;CHUNG, SUNG IL;NIKIFOROV, S.A.;OH, HYUN SEOK;JEON, JEONG WOO;KIM, YU SUNG |
发明人 |
CHUNG, SUNG IL;NIKIFOROV, S.A.;OH, HYUN SEOK;JEON, JEONG WOO;KIM, YU SUNG |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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