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发明名称
Integriertes Schaltkreisbauelement mit einer vertikalen Diode und Herstellungsverfahren
摘要
申请公布号
DE102006028971(B4)
申请公布日期
2010.01.21
申请号
DE20061028971
申请日期
2006.06.19
申请人
SAMSUNG ELECTRONICS CO. LTD.
发明人
PARK, JAE-HYUN;OH, JAE-HEE;LEE, SE-HO;JEONG, WON-CHEOL
分类号
H01L27/24;H01L45/00
主分类号
H01L27/24
代理机构
代理人
主权项
地址
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