发明名称 METHOD OF MAKING THIN FILMS CONTAINING NANOSTRUCTURED TIN DIOXIDE
摘要 FIELD: physics; nanotechnology. ^ SUBSTANCE: invention relates to nanotechnology and can be used for making sensors, devices for monitoring composition of gas mixtures, optical devices, in optoelectronics and nanoelectronics. In the method of making thin films which contain nanostructured tin dioxide, pores in cells of nanostructured aluminium oxide are filled with tin metal, after which tin is oxidised in air at 250-450C for 40-90 minutes. ^ EFFECT: obtaining uniformly ordered tin dioxide structures. ^ 1 ex
申请公布号 RU2379784(C1) 申请公布日期 2010.01.20
申请号 RU20080147630 申请日期 2008.12.02
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "VORONEZHSKIJ GOSUDARSTVENNYJ UNIVERSITET" 发明人 CHERNYSHOV VADIM VIKTOROVICH;KUKUEV VJACHESLAV IVANOVICH
分类号 B82B3/00;H01L21/316 主分类号 B82B3/00
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