| 摘要 |
The present invention discloses a sense amplifier used in an Electrically Erasable Programmable Read-only Memory; the sense amplifier includes a reference current generation circuit, which is used for providing a reference current with a settable temperature coefficient for a main circuit of the sense amplifier; the sense amplifier further includes the main circuit, which is used for comparing the reference current with a storage cell current, and distinguishing between 0 Storage Cell and 1 Storage Cell. The present invention further discloses a method of implementing the sense amplifier that is as below: With an additional current reference circuit, generating the reference current with a positive/negative/zero temperature coefficient to be inputted into the main circuit, by mixing a proportional absolute temperature current and a constant current according to different ratios; and providing a storage cell selection tube in a mirror branch of a biased current of the main circuit, so as to constitute a source degeneration circuit, thus making the biased current change with the power supply voltage and the process as well as realizing a gain compensation function. The sense amplifier of the present invention can automatically compensate the process, the power supply voltage and temperature, and possesses the dynamic high speed property.
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