| 摘要 |
FIELD: physics; semiconductors. ^ SUBSTANCE: invention relates to power semiconductor devices, specifically to high-voltage semiconductor devices. The semiconductor device periphery has a peripheral annular P-N junction, coated with a dielectric film and surrounded under the dielectric film by a spiral electroconductive film with Zener diodes, with the ends of the spiral connected to P- and N- regions of the junction on the surface of the semiconductor device. The spiral of the electroconductive film with Zener diodes has distance between turns selected based on a given condition. ^ EFFECT: neutralisation of effect of charge on stability of return leakage and breakdown voltage. ^ 6 cl, 1 dwg |
