| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an AlN sintered compact having a high thermal conductivity and excellent mirror surface finishability. <P>SOLUTION: The AlN sintered compact is manufactured by press-sintering a powdery composition containing one or more kinds of sintering aids selected from among Nd, Sm, Eu, Er, Dy, Gd, Pr, and Yb of 5-30 wt.% (as the oxides vs. the total of AlN and the sintering aids) and has a surface roughness Rmax after grinding of ≤0.2 μm and a thermal conductivity of ≥200 (W/m×K). The sintered compact is used for a substrate for an electronic device, a laser device, and a semiconductor device. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
