发明名称 Pixel structure of a thin film transistor liquid crystal display
摘要 A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a substrate. The first metallic layer and the transparent conductive layer are patterned to form a gate pattern and a pixel electrode pattern. A gate insulating layer and a semiconductor layer are sequentially formed over the substrate. A patterning process is performed to remove the first metallic layer in the pixel electrode pattern while remaining the gate insulating layer and the semiconductor layer over the gate pattern. A second metallic layer is formed over the substrate. The second metallic layer is patterned to form a source/drain pattern over the semiconductor layer. A passivation layer is formed over the substrate and then the passivation layer is patterned to expose the transparent conductive layer in the pixel electrode pattern.
申请公布号 US7649203(B2) 申请公布日期 2010.01.19
申请号 US20050180090 申请日期 2005.07.11
申请人 AU OPTRONICS CORP 发明人 HUANG MAO-TSUN;HUANG TZUFONG
分类号 H01L31/036 主分类号 H01L31/036
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