发明名称 |
A SEMICONDUCTOR DEVICE INCLUDING STORAGE NODES HAVING ENHANCED CAPACITANCE |
摘要 |
PURPOSE: A semiconductor device including storage nodes having enhanced capacitance is provided to improve data input and output and refresh characteristics by increasing the capacitance of a cell capacitor. CONSTITUTION: In semiconductor device including storage nodes having enhanced capacitance, first bit lines(230r) is electrically connected to central parts of a first active region(210r). First patterns are electrically connected to parts of the first active domain frame. A second active region(210d) is electrically to the first active domain frame. Second patterns include the second bit line(230d). Second bit lines are parallel to first bit lines. The word lines(220) is formed on the first and second active areas. The First patterns and the word lines is used for data input/output.
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申请公布号 |
KR20100006498(A) |
申请公布日期 |
2010.01.19 |
申请号 |
KR20080066745 |
申请日期 |
2008.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
WOO, DONG SOO;KIM, JONG SOO |
分类号 |
H01L27/10;H01L27/108 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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