| 摘要 |
According to an aspect of the invention, there is provided a nonvolatile ferroelectric memory, including a ferroelectric capacitor composed of a ferroelectric film sandwiched by capacitor electrodes made of a conductive material, a cell capacitor block stacked a plurality of the capacitor electrodes and the ferroelectric film of the ferroelectric capacitor perpendicular to a main surface of a silicon substrate in layer, a cell transistor having a drain electrode and a source electrode, the drain electrode and the source electrode are electrically connected to the ferroelectric capacitor in parallel, a memory cell composed of the ferroelectric capacitor and the cell transistor, a cell block having the plurality of memory cells electrically connected in series, the drain electrode and the source electrode being as a terminals, a word line, a bit line connected to one end of the cell block, the bit line being arranged along orthogonal direction to the word line and a plate line connected to the other end of the cell block, the plate line arranged along the word line.
|
