MANUFACTURING METHOD OF QUANTUM WELL STRUCTURE

摘要

PURPOSE: A manufacturing method of a quantum well structure is provided to implement light emitting characteristics due to indium composition by suppressing the decomposition of a crystalline structure. CONSTITUTION: The temperature of a substrate(15) is kept at a first temperature. A well layer(5a) is grown up. The temperature of the substrate is increased from the first temperature. An intermediate layer(5c) is grown up on the well layer. The intermediate layer includes group III nitride semiconductor. The group III nitride semiconductor has a band gap energy higher than that of the well band gap energy. The temperature of substrate is kept at the second temperature higher than a first temperature.