| 摘要 |
A light emitting display comprises: at least one first metal layer; a second metal layer crossing the first metal layer and having a first width; a light emitting device formed adjacent to a region where the first metal layer and the second metal layer cross each other; and a pixel circuit including at least one transistor which causes the light emitting device to emit light. The transistor comprises a semiconductor layer having a second width greater than the first width. With this configuration, in the light emitting display of the present invention, the semiconductor layer of the transistor is formed in a region where the source/drain metal layer and the gate metal layer cross each other, and has a width greater than that of the source/drain metal layer, so that the source/drain metal layer is disposed within the width of the semiconductor layer. Thus, a tip of the gate metal layer, formed in the grain and the pattern edge of the semiconductor layer, is not disposed within the region overlapping the source/drain metal layer so that generation of static electricity between the gate metal layer and the source/drain metal layer is prevented.
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