发明名称 Method and apparatus for creating a topographically patterned substrate
摘要 A method of the present invention is presented for deep etching of features on a surface. In one embodiment, the method includes providing a substrate having a surface selected to undergo a feature etching process and coating the substrate surface with a protective layer and an imprintable layer. The coated substrate is then subjected to a feature imprinting and etching process. Subsequent to the feature etching process, exposed portions of the protective layer are removed, exposing a well-defined, topographically patterned substrate. In addition, an apparatus for undergoing a feature etching process is disclosed. The apparatus comprises a substrate, an imprintable layer selected to undergo an imprinting process, and a protective layer positioned between the substrate and the imprintable layer. The protective layer may be selected to provide additional protection to selected portions of the substrate and to prevent non-planar byproducts of the feature etching process from transferring to the selected portions.
申请公布号 US7648641(B2) 申请公布日期 2010.01.19
申请号 US20050155099 申请日期 2005.06.17
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 ALBRECHT THOMAS ROBERT;YANG HENRY HUNG
分类号 B44C1/22 主分类号 B44C1/22
代理机构 代理人
主权项
地址