| 发明名称 |
Semiconductor structure including mixed rare earth oxide formed on silicon |
| 摘要 |
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
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| 申请公布号 |
US7648864(B2) |
申请公布日期 |
2010.01.19 |
| 申请号 |
US20080197079 |
申请日期 |
2008.08.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOJARCZUK, JR. NESTOR ALEXANDER;BUCHANAN DOUGLAS ANDREW;GUHA SUPRATIK;NARAYANAN VIJAY;RAGNARSSON LARS-AKE |
| 分类号 |
H01L21/00;H01L21/302;H01L21/316;H01L21/336;H01L21/76;H01L21/84 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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