| 摘要 |
According to an embodiment, a nonvolatile semiconductor memory system includes: a nonvolatile semiconductor memory; and a memory controller having: a memory interface unit that inputs commands to the nonvolatile semiconductor memory and inputs or outputs data between the nonvolatile semiconductor memory; a memory that stores writing information indicating a memory cell transistor that is written the latest in each of the NAND cell units; and a processor that sets a read voltage based on the writing information to readout data from the memory cell transistors connected to a first word line; wherein a row controller is configured to set a plurality of levels of the read voltage to be applied to the first word line, with respect to one threshold for discriminating data stored in a memory cell transistors.
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